FP50R07N2E4B11 Infineon Technologies | IGBT Transistors / Modules
| Leaderone # | FP50R07N2E4B11 Infineon Technologies | IGBT Transistors / Modules |
| Mfr.Part.# | FP50R07N2E4B11 |
| Mfr. | Infineon Technologies |
| Encapsulation | |
| Description | 20mW 70A 650V FS(Field Stop) IGBT Transistors / Modules ROHS |
| Product Category | Hot Brands |
| In stock | 98 |
| RoHS | YES |
| Mounting Style | |
| Package / Case | Tray |
| Subcategory | IGBT Transistors / Modules |
| More Information | Pd - Power Dissipation:20mW|Operating Temperature:-40¡æ~+150¡æ@(Tj)|Current - Collector(Ic):70A|Collector-Emitter Breakdown Voltage (Vces):650V|Input Capacitance(Cies):3.1nF@25V|IGBT Type:FS(Field Stop)|Gate-Emitter Threshold Voltage (Vge(th)@Ic):1.95V@15… |
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