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IPB107N20N3G Infineon Technologies | MOSFETs

Leaderone #	IPB107N20N3G Infineon Technologies \| MOSFETs
Mfr.Part.#	IPB107N20N3G
Mfr.	Infineon Technologies
Encapsulation	TO-263-3
Description	200V 88A 300W 10.7m¦¸@10V,88A 4V 1 N-channel TO-263-3 MOSFETs ROHS
Product Category	Hot Brands
In stock	1000
RoHS	YES
Mounting Style
Package / Case	Tape & Reel (TR)
Subcategory	MOSFETs
More Information	Drain to Source Voltage:200V\|Current - Continuous Drain(Id):88A\|Pd - Power Dissipation:300W\|RDS(on):10.7m¦¸@10V,88A\|Gate Threshold Voltage (Vgs(th)@Id):4V\|Reverse Transfer Capacitance (Crss@Vds):533pF@100V\|Type:1 N-channel\|Input Capacitance(Ciss@Vds):7.1n…

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