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IPB200N25N3 G Infineon Technologies | MOSFETs

Leaderone #IPB200N25N3 G Infineon Technologies | MOSFETs
Mfr.Part.#IPB200N25N3 G
Mfr.Infineon Technologies
EncapsulationTO-263-3
Description250V 64A 300W 20m¦¸@10V,64A 4V 1 N-channel TO-263-3 MOSFETs ROHS
Product CategoryHot Brands
In stock1000
RoHSYES
Mounting Style
Package / CaseTape & Reel (TR)
SubcategoryMOSFETs
More InformationDrain to Source Voltage:250V|Current - Continuous Drain(Id):64A|Pd - Power Dissipation:300W|RDS(on):20m¦¸@10V,64A|Gate Threshold Voltage (Vgs(th)@Id):4V|Type:1 N-channel
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